Ion-beam-induced amorphization of 6H-SiC

被引：35

作者：

Bolse, Wolfgang

Conrad, Jens

Roedle, Thomas

Weber, Thomas

机构：

[1] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany

[2] Univ Gottingen, SFB 345, D-37073 Gottingen, Germany

[3] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany

[4] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands

来源：

SURFACE & COATINGS TECHNOLOGY | 1995年 / 74-75卷 / 1-3期

关键词：

ion irradiation; radiation damage; amorphization; silicon carbide;

D O I：

10.1016/0257-8972(95)08288-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the amorphization of 6H-SiC during bombardment with Na ions of energy 100 and 155 keV, by means of Rutherford backscattering in channelling geometry, mechanical surface profiling and Raman spectroscopy. The material was found to amorphize at a critical damage rate of about 1/10 displacements per atom. An incubation fluence is needed to initiate the amorphization process. The observed density changes and the results of the Raman measurements also indicate that, at low fluences, an amorphous network is formed, which conserves the chemical short-range order of the crystalline material. Further application of higher fluences drives the system to form an atomically disordered structure without chemical short-range order.

引用

页码：927 / 931

页数：5

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