A DUAL-GATE DEEP-DEPLETION TECHNIQUE FOR GENERATION LIFETIME MEASUREMENT

[1] Barth P. W., 1977, 1977 International Solid-State Circuits Conference. (Digest of Technical Papers), P220

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[3] MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 675 - 681

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[5] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[6] SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 265 - 272

[1] Barth P. W., 1977, 1977 International Solid-State Circuits Conference. (Digest of Technical Papers), P220

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[3] MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 675 - 681

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[5] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[6] SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 265 - 272