MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING

被引：11

作者：

KAMINS, TI ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1101(74)90090-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：675 / 681

页数：7

共 14 条

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[3]

EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[4]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[6] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J].

JUND, C .

SOLID-STATE ELECTRONICS, 1966, 9 (04) :315-&

[7] HALL-MOBILITY IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING [J].

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :667-674

[8] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS [J].

KAMINS, TI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07) :915-+

[9] HIGH-RESOLUTION SEM OBSERVATION OF SEMICONDUCTOR DEVICE CROSS-SECTIONS [J].

MEIERAN, ES ;

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :545-+

[10] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J].

SCHRODER, DK ;

NATHANSON, HC .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :577-+

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