HIGH-RESOLUTION SEM OBSERVATION OF SEMICONDUCTOR DEVICE CROSS-SECTIONS

被引：10

作者：

MEIERAN, ES ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 05期

关键词：

D O I：

10.1016/0038-1101(73)90153-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：545 / +

页数：1

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[7]

MEIERAN ES, 1971, ELECTRON MICROS, P1027

[8] STUDIES OF ANOMALOUS DIFFUSION OF IMPURITIES IN SILICON [J].

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[10]

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