DEVICE FAILURE ANALYSIS BY SCANNING ELECTRON MICROSCOPY

被引：4

作者：

THORNTON, PR

DAVIES, IG

SHAW, DA

SULWAY, DV

WAYTE, RC

机构：

[1] School of Engineering Science, University College of North Wales, Bangor, Wales

来源：

MICROELECTRONICS RELIABILITY | 1969年 / 8卷 / 01期

关键词：

D O I：

10.1016/0026-2714(69)90109-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：33 / &

共 38 条

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[2]

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[6]

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[7]

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GAYLORD, JW .

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[9] OBSERVATION OF INVERSION LAYERS UNDER INSULATED-GATE ELECTRODES USING A SCANNING-ELECTRON MICROSCOPE [J].

GREEN, D ;

NATHANSON, HC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :183-+

[10] SOME OBSERVATIONS OF SURFACE SEGREGATION BY AUGER ELECTRON EMISSION [J].

HARRIS, LA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1428-&

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