HALL-MOBILITY IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING

被引：6

作者：

KAMINS, TI ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1101(74)90089-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：667 / 674

页数：8

共 22 条

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