PREPARATION AND PROPERTIES OF THE GESI-OXIDE SYSTEM

A review of the literature on the GeSi-oxide system is given from the point of view of its interest to field effect device application. To this end the thermal oxidation of Si and of Ge and the properties of the resulting semiconductor-oxide systems are dealt with first. Next, there is a discussion of the oxidation of GeSi-alloys and a comparison with that of Si. The properties of the resulting alloy-oxide system and the characteristics of metal-oxide-semiconductor field effect transistor (MOSFET) devices based on it are reviewed. Finally, recent publications on MOSFET devices utilizing a thin Si-cap layer separating the gate insulator from the GeSi-alloy are discussed.