LATERAL CURRENT CONFINEMENT BY REVERSE-BIASED JUNCTIONS IN GAAS-ALXGA1-XAS DH LASERS

被引：15

作者：

TSANG, WT ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 10期

关键词：

D O I：

10.1063/1.89226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：538 / 540

页数：3

共 17 条

[1] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 510 - 511
[2] DISTRIBUTED FEEDBACK BURIED HETEROSTRUCTURE DIODE-LASER
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (05) : 287 - 289
[3] STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS
BURNHAM, RD
SCIFRES, DR
TRAMONTANA, JC
ALIMONDA, AS
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 418 - 420
[4] IMPROVED LIGHT-OUTPUT LINEARITY IN STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE (AL,GA)AS LASERS
DIXON, RW
NASH, FR
HARTMAN, RL
HEPPLEWHITE, RT
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 372 - 374
[5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION
DYMENT, JC
NORTH, JC
MILLER, BI
RIPPER, JE
DASARO, LA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
[6] HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS
DYMENT, JC
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 84 - &
[7] NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
ITOH, K
INOUE, M
TERAMOTO, I
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 421 - 426
[8] STEADY-STATE JUNCTION-CURRENT DISTRIBUTIONS IN THIN RESISTIVE FILMS ON SEMICONDUCTOR JUNCTIONS (SOLUTIONS OF DEL 2V = +/- EV)
JOYCE, WB
WEMPLE, SH
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3818 - &
[9] KIRKBY PA, 1976, TOP M INTEGRATED OPT
[10] SINGLE-TRANSVERSE-MODE INJECTION-LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR-BEAM EPITAXY
LEE, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 164 - 166

← 1 2 →