SI/GE/SI MONOLAYER HETEROSTRUCTURE ON SI(100) STUDIED BY SURFACE-SENSITIVE EXAFS

被引：26

作者：

OYANAGI, H ^{[1
]}

SAKAMOTO, T ^{[1
]}

SAKAMOTO, K ^{[1
]}

MATSUSHITA, T ^{[1
]}

YAO, T ^{[1
]}

ISHIGURO, T ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,OHO,IBARAKI 305,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1988年 / 57卷 / 06期

关键词：

D O I：

10.1143/JPSJ.57.2086

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2086 / 2092

页数：7

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