SPUTTERING OF THIN-FILMS OF PB(ZRTI)O3

被引：2

作者：

BOFFGEN, M

SCHMITT, H

机构：

[1] Fachbereich Physik der Universitat des Saarlandes

来源：

FERROELECTRICS | 1990年 / 108卷

关键词：

D O I：

10.1080/00150199008018726

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(ZrTi103 thin films of some selected Zr/Ti-ratios were produced by reactive dc diode sputtering and rf triodesputtering respective1. Films, which weresputtered at substrate temperatures or about 1000 K show the typical ferroelectric behaviour. An additional effectwith thin ferroelectric Pb(ZrTi103 films is that the morphotropic phase boundary isshifted to higher concentrations of zirconium in the solid solution. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：15 / 20

页数：6

共 7 条

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