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PULSE FORMING AND TRIGGERING USING RESONANT TUNNELING DIODE STRUCTURES
被引:14
作者
:
OZBAY, E
论文数:
0
引用数:
0
h-index:
0
机构:
TEKTRONIX INC,BEAVERTON,OR 97077
TEKTRONIX INC,BEAVERTON,OR 97077
OZBAY, E
[
1
]
BLOOM, DM
论文数:
0
引用数:
0
h-index:
0
机构:
TEKTRONIX INC,BEAVERTON,OR 97077
TEKTRONIX INC,BEAVERTON,OR 97077
BLOOM, DM
[
1
]
DIAMOND, SK
论文数:
0
引用数:
0
h-index:
0
机构:
TEKTRONIX INC,BEAVERTON,OR 97077
TEKTRONIX INC,BEAVERTON,OR 97077
DIAMOND, SK
[
1
]
机构
:
[1]
TEKTRONIX INC,BEAVERTON,OR 97077
来源
:
ELECTRONICS LETTERS
|
1990年
/ 26卷
/ 14期
关键词
:
Pulse generation;
Resonance;
Semiconductor devices and materials;
Tunnel diodes;
D O I
:
10.1049/el:19900678
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
Resonant tunnelling diodes (RTDs) monolithically integrated with coplanar transmission lines have been used for pulse formation, with measured rise times as low as 6ps. Triggering at 60GHz was performed by using the RTD pulser structures as trigger circuits. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1046 / 1048
页数:3
相关论文
共 5 条
[1]
NANOSECOND TRIGGER CIRCUITS
[J].
BARNA, A
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h-index:
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机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
BARNA, A
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(05)
:17
-21
[2]
FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS
[J].
DIAMOND, SK
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STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
DIAMOND, SK
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STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
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;
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STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
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STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
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IEEE ELECTRON DEVICE LETTERS,
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:104
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[3]
DIAMOND SK, 1989, APPL PHYS LETT, V52, P2163
[4]
RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ
[J].
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[5]
PICOSECOND OPTICAL-SAMPLING OF GAAS INTEGRATED-CIRCUITS
[J].
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Stanford Univ, CA, USA, Stanford Univ, CA, USA
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Stanford Univ, CA, USA, Stanford Univ, CA, USA
BLOOM, DM
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1988,
24
(02)
:198
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←
1
→
共 5 条
[1]
NANOSECOND TRIGGER CIRCUITS
[J].
BARNA, A
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
BARNA, A
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(05)
:17
-21
[2]
FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS
[J].
DIAMOND, SK
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
DIAMOND, SK
;
OZBAY, E
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
OZBAY, E
;
RODWELL, MJW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
RODWELL, MJW
;
BLOOM, DM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
BLOOM, DM
;
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论文数:
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引用数:
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h-index:
0
机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
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PAO, YC
;
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机构:
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WOLAK, E
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机构:
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
HARRIS, JS
.
IEEE ELECTRON DEVICE LETTERS,
1989,
10
(03)
:104
-106
[3]
DIAMOND SK, 1989, APPL PHYS LETT, V52, P2163
[4]
RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ
[J].
SOLLNER, TCLG
论文数:
0
引用数:
0
h-index:
0
SOLLNER, TCLG
;
GOODHUE, WD
论文数:
0
引用数:
0
h-index:
0
GOODHUE, WD
;
TANNENWALD, PE
论文数:
0
引用数:
0
h-index:
0
TANNENWALD, PE
;
PARKER, CD
论文数:
0
引用数:
0
h-index:
0
PARKER, CD
;
PECK, DD
论文数:
0
引用数:
0
h-index:
0
PECK, DD
.
APPLIED PHYSICS LETTERS,
1983,
43
(06)
:588
-590
[5]
PICOSECOND OPTICAL-SAMPLING OF GAAS INTEGRATED-CIRCUITS
[J].
WEINGARTEN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, CA, USA, Stanford Univ, CA, USA
WEINGARTEN, KJ
;
RODWELL, MJW
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, CA, USA, Stanford Univ, CA, USA
RODWELL, MJW
;
BLOOM, DM
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, CA, USA, Stanford Univ, CA, USA
BLOOM, DM
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1988,
24
(02)
:198
-220
←
1
→