FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS

被引：29

作者：

DIAMOND, SK ^{[1
]}

OZBAY, E ^{[1
]}

RODWELL, MJW ^{[1
]}

BLOOM, DM ^{[1
]}

PAO, YC ^{[1
]}

WOLAK, E ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：104 / 106

页数：3

共 6 条

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[2]

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[5] NEW RESONANT-TUNNELING DEVICES WITH MULTIPLE NEGATIVE-RESISTANCE REGIONS AND HIGH ROOM-TEMPERATURE PEAK-TO-VALLEY RATIO [J].

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[6] PICOSECOND OPTICAL-SAMPLING OF GAAS INTEGRATED-CIRCUITS [J].

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