3-DIMENSIONAL INTEGRATION OF RESONANT TUNNELING STRUCTURES FOR SIGNAL-PROCESSING AND 3-STATE LOGIC

被引:35
作者
POTTER, RC
LAKHANI, AA
BEYEA, D
HIER, H
HEMPFLING, E
FATHIMULLA, A
机构
关键词
D O I
10.1063/1.99565
中图分类号
O59 [应用物理学];
学科分类号
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页码:2163 / 2164
页数:2
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共 8 条
[1]  
HURST SL, 1984, IEEE T COMPUT, V33, P1160, DOI 10.1109/TC.1984.1676392
[2]   A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].
INATA, T ;
MUTO, S ;
NAKATA, Y ;
SASA, S ;
FUJII, T ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334
[3]   COMBINING RESONANT TUNNELING DIODES FOR SIGNAL-PROCESSING AND MULTILEVEL LOGIC [J].
LAKHANI, AA ;
POTTER, RC .
APPLIED PHYSICS LETTERS, 1988, 52 (20) :1684-1685
[4]   AI0.48IN0.52AS/GA0.47IN0.53AS RESONANT TUNNELLING DIODES WITH LARGE CURRENT PEAK VALLEY RATIO [J].
LAKHANI, AA ;
POTTER, RC ;
BEYEA, D ;
HIER, HH ;
HEMPFLING, E ;
AINA, L ;
OCONNOR, JM .
ELECTRONICS LETTERS, 1988, 24 (03) :153-154
[5]   HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J].
LIU, HC ;
COON, DD .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1246-1248
[6]   OBSERVATION OF RESONANT TUNNELING VIA 1ST EXCITED-LEVEL IN DOUBLE-BARRIER DIODES [J].
NAKAGAWA, T ;
IMAMOTO, H ;
KAWAI, NJ ;
KOJIMA, T ;
OHTA, K .
ELECTRONICS LETTERS, 1986, 22 (08) :406-407
[7]   EXCITED-STATE RESONANT TUNNELING IN GAAS-ALXGA1-XAS DOUBLE BARRIER HETEROSTRUCTURES [J].
REED, MA .
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (01) :65-67
[8]   RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE - DIGITAL AND SIGNAL-PROCESSING APPLICATIONS WITH REDUCED CIRCUIT COMPLEXITY [J].
SEN, S ;
CAPASSO, F ;
CHO, AY ;
SIVCO, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) :2185-2191