AI0.48IN0.52AS/GA0.47IN0.53AS RESONANT TUNNELLING DIODES WITH LARGE CURRENT PEAK VALLEY RATIO

被引：23

作者：

LAKHANI, AA

POTTER, RC

BEYEA, D

HIER, HH

HEMPFLING, E

AINA, L

OCONNOR, JM

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1049/el:19880102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 154

页数：2

共 7 条

[1] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[2] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L983-L985

[3] QUANTUM-WELL WIDTH DEPENDENCE OF NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.52AL0.48AS/IN0.53GA0.47AS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

SUGIYAMA, Y ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03) :L220-L222

[4] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

OHNISHI, H ;

YOKOYAMA, N ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579

[5] ROOM-TEMPERATURE OPERATION OF GA0.47IN0.53AS/AL0.48IN0.52AS RESONANT TUNNELING DIODES [J].

SEN, S ;

CAPASSO, F ;

HUTCHINSON, AL ;

CHO, AY .

ELECTRONICS LETTERS, 1987, 23 (23) :1229-1231

[6]

TSUCHIYA M, 1986, APPL PHYS LETT, V49, P88, DOI 10.1063/1.97360

[7] PRECISE CONTROL OF RESONANT TUNNELING CURRENT IN ALAS/GAAS/ALAS DOUBLE BARRIER DIODES WITH ATOMICALLY-CONTROLLED BARRIER WIDTHS [J].

TSUCHIYA, M ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L185-L187

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