SIMPLE METHOD FOR ACCURATELY DETERMINING THE INJECTION EFFICIENCY AND BULK QUANTUM EFFICIENCY OF LIGHT-EMITTING-DIODES

被引：7

作者：

VANOPDORP, C ^{[1
]}

BLOK, L ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1101(82)90062-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：599 / 610

页数：12

共 31 条

[1] X-RAY TOPOGRAPHY AND DIODE EFFICIENCY OF VAPOR GROWN GAAS1-XPX LAYERS [J].

BARTELS, WJ ;

BLOK, L ;

BULLE, CWT .

JOURNAL OF CRYSTAL GROWTH, 1976, 34 (02) :181-188

[2]

Bergh A., 1976, LIGHT EMITTING DIODE

[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4]

Calverley A., 1970, Solid-State Electronics, V13, P382, DOI 10.1016/0038-1101(70)90189-9

[5] SURFACE LEAKAGE CURRENT IN RECTIFIERS [J].

CUTLER, M ;

BATH, HM .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (11) :1440-1441

[6]

DEBYE JAW, 1969, REV SCI INSTRUM, V40, P320, DOI 10.1063/1.1683927

[7]

DEBYE JAW, 1976, J LUM, V14, P101

[8] EFFECT OF DONOR CONCENTRATION ON GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES [J].

DIERSCHKE, EG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :321-+

[9] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

GERSHENZON, M ;

LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[10] MOBILITY IN HEAVILY DOPED GALLIUM ARSENIDE [J].

GOOCH, CH .

PHYSICS LETTERS, 1965, 14 (03) :183-&

← 1 2 3 4 →