X-RAY TOPOGRAPHY AND DIODE EFFICIENCY OF VAPOR GROWN GAAS1-XPX LAYERS

被引：7

作者：

BARTELS, WJ ^{[1
]}

BLOK, L ^{[1
]}

BULLE, CWT ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90128-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：181 / 188

页数：8

相关论文

共 11 条

[1] Authier A., 1970, Modern diffraction and imaging techniques in material science, P481
[2] METHOD FOR PRODUCING GRADED COMPOSITION EPITAXIAL LAYERS BY VAPOR DEPOSITION
BAILEY, LG
ROGERS, GG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 834 - &
[3] BELOUET C, 1972, J CRYST GROWTH, V13, P342
[4] COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS
EWING, RE
SMITH, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 5943 - &
[5] HU SM, 1974, Patent No. 3821033
[6] CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
OGIRIMA, M
KURATA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 617 - &
[7] Lang A. R., 1970, Modern diffraction and imaging techniques in material science, P407
[8] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX
MADER, S
BLAKESLEE, AE
ANGILELLO, J
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4730 - 4734
[9] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
NUESE, CJ
TIETJEN, JJ
GANNON, JJ
GOSSENBERGER, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +
[10] DISLOCATIONS IN GAAS1-XPX
STRINGFELLOW, GB
GREENE, PE
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +