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OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
被引:32
作者
:
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
GANNON, JJ
GOSSENBERGER, HF
论文数:
0
引用数:
0
h-index:
0
GOSSENBERGER, HF
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1969年
/ 116卷
/ 02期
关键词
:
D O I
:
10.1149/1.2411807
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:248 / +
页数:1
相关论文
共 27 条
[1]
DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
: 760
-
&
[2]
CHARACTERISTICS OF A GAAS SPONTANEOUS INFRARED SOURCE WITH 40 PERCENT EFFICIENCY
CARR, WN
论文数:
0
引用数:
0
h-index:
0
CARR, WN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(10)
: 531
-
&
[3]
SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
PEARSON, GL
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(01)
: 23
-
&
[4]
IMPROVING EXTERNAL EFFICIENCY OF ELECTROLUMINESCENT DIODES
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
GALGINAITIS, SV
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(02)
: 460
-
+
[5]
EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K
GONDA, T
论文数:
0
引用数:
0
h-index:
0
GONDA, T
LAMORTE, MF
论文数:
0
引用数:
0
h-index:
0
LAMORTE, MF
NYUL, P
论文数:
0
引用数:
0
h-index:
0
NYUL, P
JUNKER, H
论文数:
0
引用数:
0
h-index:
0
JUNKER, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1966,
QE 2
(04)
: 74
-
+
[6]
INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
论文数:
0
引用数:
0
h-index:
0
HILL, DE
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964,
133
(3A):
: A866
-
&
[7]
HILL DE, 1965, B AM PHYS SOC, V10, P97
[8]
EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
SIRKIS, MD
论文数:
0
引用数:
0
h-index:
0
SIRKIS, MD
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
STILLMAN, GE
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(04)
: 83
-
&
[9]
JENKINS FA, 1957, FUNDAMENTALS OPTICS, P15
[10]
P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
WHITE, HG
论文数:
0
引用数:
0
h-index:
0
WHITE, HG
TRUMBORE, FA
论文数:
0
引用数:
0
h-index:
0
TRUMBORE, FA
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(07)
: 206
-
&
←
1
2
3
→
共 27 条
[1]
DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
: 760
-
&
[2]
CHARACTERISTICS OF A GAAS SPONTANEOUS INFRARED SOURCE WITH 40 PERCENT EFFICIENCY
CARR, WN
论文数:
0
引用数:
0
h-index:
0
CARR, WN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(10)
: 531
-
&
[3]
SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
PEARSON, GL
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(01)
: 23
-
&
[4]
IMPROVING EXTERNAL EFFICIENCY OF ELECTROLUMINESCENT DIODES
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
GALGINAITIS, SV
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(02)
: 460
-
+
[5]
EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K
GONDA, T
论文数:
0
引用数:
0
h-index:
0
GONDA, T
LAMORTE, MF
论文数:
0
引用数:
0
h-index:
0
LAMORTE, MF
NYUL, P
论文数:
0
引用数:
0
h-index:
0
NYUL, P
JUNKER, H
论文数:
0
引用数:
0
h-index:
0
JUNKER, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1966,
QE 2
(04)
: 74
-
+
[6]
INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
论文数:
0
引用数:
0
h-index:
0
HILL, DE
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964,
133
(3A):
: A866
-
&
[7]
HILL DE, 1965, B AM PHYS SOC, V10, P97
[8]
EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
SIRKIS, MD
论文数:
0
引用数:
0
h-index:
0
SIRKIS, MD
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
STILLMAN, GE
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(04)
: 83
-
&
[9]
JENKINS FA, 1957, FUNDAMENTALS OPTICS, P15
[10]
P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
WHITE, HG
论文数:
0
引用数:
0
h-index:
0
WHITE, HG
TRUMBORE, FA
论文数:
0
引用数:
0
h-index:
0
TRUMBORE, FA
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(07)
: 206
-
&
←
1
2
3
→