EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K

被引：16

作者：

GONDA, T

LAMORTE, MF

NYUL, P

JUNKER, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1966年 / QE 2卷 / 04期

关键词：

D O I：

10.1109/JQE.1966.1073991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：74 / +

页数：1

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