METHOD FOR PRODUCING GRADED COMPOSITION EPITAXIAL LAYERS BY VAPOR DEPOSITION

被引：5

作者：

BAILEY, LG

ROGERS, GG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 05期

关键词：

D O I：

10.1149/1.2408178

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：834 / &

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[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
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[2] PREPARATION OF EPITAXIAL GAXIN1-XAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &
[3] EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES
SAUL, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3273 - &
[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE
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AMICK, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &