RECOMBINATION RADIATION AND STIMULATED EMISSION IN GAAS

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] LASER CONDITIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703

[3] RECOMBINATION RADIATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &

[4] BROOM RF, 1963, NATURE, V198, P4878

[5] LINE SHAPE IN GAAS INJECTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 471 - &

[6] ROOM-TEMPERATURE STIMULATED EMISSION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 72 - 73

[7] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &

[8] BURNS GT, UNPUB

[9] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[10] DILL FH, 1963, UNPUB FEB SOL STAT D

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] LASER CONDITIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703

[3] RECOMBINATION RADIATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &

[4] BROOM RF, 1963, NATURE, V198, P4878

[5] LINE SHAPE IN GAAS INJECTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 471 - &

[6] ROOM-TEMPERATURE STIMULATED EMISSION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 72 - 73

[7] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &

[8] BURNS GT, UNPUB

[9] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[10] DILL FH, 1963, UNPUB FEB SOL STAT D