CROSS SECTIONS OF MIDGAP SURFACE STATES IN SILICON BY PULSED FIELD EFFECT EXPERIMENT

被引：43

作者：

RUPPRECHT, G

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(60)90231-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：208 / 213

页数：6

共 7 条

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[3] ENERGY LEVELS IN NEUTRON-IRRADIATED N-TYPE SILICON
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KLEIN, CA
[J]. PHYSICAL REVIEW, 1959, 116 (02): : 342 - 343
[4] MEASUREMENT OF GERMANIUM SURFACE STATES BY PULSED CHANNEL EFFECT
RUPPRECHT, G
[J]. PHYSICAL REVIEW, 1958, 111 (01): : 75 - 81
[5] RUPPRECHT G, 1958, B AM PHYS SOC, V3, P377
[6] SURFACE STATES ON SILICON AND GERMANIUM SURFACES
STATZ, H
DEMARS, G
DAVIS, L
ADAMS, A
[J]. PHYSICAL REVIEW, 1957, 106 (03): : 455 - 464
[7] STATZ H, 1957, SEMICONDUCTOR SURFAC, P139