HEXAGONAL PHASE PRODUCED BY HOT IMPLANTS IN SILICON

被引：11

作者：

SERVIDORI, M

CANNAVO, S

FERLA, G

LAFERLA, A

CAMPISANO, SU

RIMINI, E

机构：

[1] SGS MICROELETTR SPA, I-95100 CATANIA, ITALY

[2] UNIV CATANIA, DEPARTIMENTO FIS, I-95129 CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80064-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：317 / 321

页数：5

共 13 条

[1] ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS [J].

CANNAVO, S ;

GRIMALDI, MG ;

RIMINI, E ;

FERLA, G ;

GANDOLFI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :138-140

[2] ION-BEAM ANNEALING DURING HIGH-CURRENT DENSITY IMPLANTS OF PHOSPHORUS INTO SILICON [J].

CANNAVO, S ;

LAFERLA, A ;

RIMINI, E ;

FERLA, G ;

GANDOLFI, L .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4038-4042

[3] DAMAGED AND RECONSTRUCTED REGIONS IN SILICON AFTER HEAVY ARSENIC IMPLANTATION [J].

CEROFOLINI, GF ;

MEDA, L ;

QUEIROLO, G ;

ARMIGLIATO, A ;

SOLMI, S ;

NAVA, F ;

OTTAVIANI, G .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2981-2983

[4] HIGH DOSE EFFECTS IN ION-IMPLANTATION [J].

DVURECHENSKY, AV ;

GERASIMENKO, NN ;

ROMANOV, SI ;

SMIRNOV, LS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02) :69-71

[5]

EREMENKO VG, 1972, PHYS STATUS SOLIDI A, V14, P313

[6]

GYULAI J, 1984, ION IMPLANTATION SCI, P139

[7]

Komarov F. F., 1985, Radiation Effects, V90, P307, DOI 10.1080/00337578508222540

[8]

MADER S, 1984, ION IMPLANTATION SCI, P109

[9]

MARINE W, 1986, NONDIAMOND STRUCTURA

[10]

MOREHEAD FF, 1971, ION IMPLANTATION, P25

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