ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS

被引：14

作者：

CANNAVO, S ^{[1
]}

GRIMALDI, MG ^{[1
]}

RIMINI, E ^{[1
]}

FERLA, G ^{[1
]}

GANDOLFI, L ^{[1
]}

机构：

[1] SGS ATES,I-95100 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：138 / 140

页数：3

共 14 条

[1]

BENLAND DG, 1984, ION IMPLANTATION BEA, P261

[2] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J].

CSEPREGI, L ;

KENNEDY, EF ;

LAU, SS ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :645-648

[3] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON [J].

ELLIMAN, RG ;

JOHNSON, ST ;

POGANY, AP ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :310-315

[4]

GYULAI J, 1984, ION IMPLANTATION SCI, P139

[5] MECHANISM FOR DYNAMIC ANNEALING DURING HIGH-FLUX ION IRRADIATION IN SI [J].

HOLLAND, OW ;

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :758-760

[6]

HOLMEN G, 1984, APPL PHYS LETT, V45, P116

[7]

LAU SS, 1980, HDB SEMICONDUCTORS, V3, P531

[8]

NAKATA J, 1982, APPL PHYS LETT, V40, P666

[9] TARGET HEATING DURING ION-IMPLANTATION [J].

PARRY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02) :622-629

[10] REGROWTH BEHAVIOR OF 3 DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI [J].

SADANA, DK ;

WILSON, MC ;

BOOKER, GR ;

WASHBURN, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1589-1591

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