REGROWTH BEHAVIOR OF 3 DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI

被引：7

作者：

SADANA, DK ^{[1
]}

WILSON, MC ^{[1
]}

BOOKER, GR ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期

关键词：

D O I：

10.1149/1.2129957

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1589 / 1591

页数：3

共 7 条

[1] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[2] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[3]

PETTIT HR, 1971, 25TH P ANN M EMAG LO

[4] ELECTRON-MICROSCOPE STUDIES OF ION-IMPLANTED SILICON AND GALLIUM-ARSENIDE AFTER LASER AND FURNACE ANNEALING [J].

SADANA, DK ;

WILSON, MC ;

BOOKER, GR .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :51-59

[5]

SADANA DK, UNPUBLISHED

[6]

WILLIAMS JS, 1979, OCT EL CHEM SOC EXT, P1317

[7] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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