ELECTRON-MICROSCOPE STUDIES OF ION-IMPLANTED SILICON AND GALLIUM-ARSENIDE AFTER LASER AND FURNACE ANNEALING

被引：6

作者：

SADANA, DK ^{[1
]}

WILSON, MC ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00245.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：51 / 59

页数：9

共 7 条

[1] LASER ANNEALING OF CAPPED AND UNCAPPED GAAS
KULAR, SS
SEALY, BJ
BADAWI, MH
STEPHENS, KG
SADANA, D
BOOKER, GR
[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 413 - 414
[2] KULAR SS, 1979, SOLID STATE ELECTRON
[3] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153
[4] PETTIT HR, 1971, 25TH P ANN M EMAG I, P290
[5] READY JF, 1971, EFFECTS HIGH POWER L, P1
[6] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS
SEALY, BJ
SURRIDGE, RK
[J]. THIN SOLID FILMS, 1975, 26 (02) : L19 - L22
[7] SMITH B, 1977, ION IMPLANTATION RAN