LASER ANNEALING OF CAPPED AND UNCAPPED GAAS

被引:24
作者
KULAR, SS [1 ]
SEALY, BJ [1 ]
BADAWI, MH [1 ]
STEPHENS, KG [1 ]
SADANA, D [1 ]
BOOKER, GR [1 ]
机构
[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
关键词
Annealing; Gallium arsenide; Laser-beam applications;
D O I
10.1049/el:19790296
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:413 / 414
页数:2
相关论文
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    CELLER, GK
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 965 - 967
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    SEALY, BJ
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    [J]. ELECTRONICS LETTERS, 1978, 14 (22) : 720 - 721
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