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LASER ANNEALING OF CAPPED AND UNCAPPED GAAS
被引:24
作者
:
KULAR, SS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
KULAR, SS
[
1
]
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
SEALY, BJ
[
1
]
BADAWI, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
BADAWI, MH
[
1
]
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
STEPHENS, KG
[
1
]
SADANA, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
SADANA, D
[
1
]
BOOKER, GR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
BOOKER, GR
[
1
]
机构
:
[1]
UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
来源
:
ELECTRONICS LETTERS
|
1979年
/ 15卷
/ 14期
关键词
:
Annealing;
Gallium arsenide;
Laser-beam applications;
D O I
:
10.1049/el:19790296
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:413 / 414
页数:2
相关论文
共 5 条
[1]
OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
BARNES, PA
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
LEAMY, HJ
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
POATE, JM
FERRIS, SD
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
FERRIS, SD
WILLIAMS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
WILLIAMS, JS
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
CELLER, GK
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(11)
: 965
-
967
[2]
ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
SEALY, BJ
KULAR, SS
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
KULAR, SS
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
STEPHENS, KG
CROFT, R
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
CROFT, R
PALMER, A
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
PALMER, A
[J].
ELECTRONICS LETTERS,
1978,
14
(22)
: 720
-
721
[3]
SEALY BJ, 1978, SEP I PHYS C NIC 46
[4]
SEALY BJ, 1978, NOV P S LAS SOL INT
[5]
SEALY BJ, 1978, SEP INT C ION BEAM M
←
1
→
共 5 条
[1]
OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
BARNES, PA
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
LEAMY, HJ
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
POATE, JM
FERRIS, SD
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
FERRIS, SD
WILLIAMS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
WILLIAMS, JS
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540
CELLER, GK
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(11)
: 965
-
967
[2]
ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
SEALY, BJ
KULAR, SS
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
KULAR, SS
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
STEPHENS, KG
CROFT, R
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
CROFT, R
PALMER, A
论文数:
0
引用数:
0
h-index:
0
机构:
CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND
PALMER, A
[J].
ELECTRONICS LETTERS,
1978,
14
(22)
: 720
-
721
[3]
SEALY BJ, 1978, SEP I PHYS C NIC 46
[4]
SEALY BJ, 1978, NOV P S LAS SOL INT
[5]
SEALY BJ, 1978, SEP INT C ION BEAM M
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1
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