OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS

被引：40

作者：

BARNES, PA

LEAMY, HJ

POATE, JM

FERRIS, SD

WILLIAMS, JS

CELLER, GK

机构：

[1] WESTERN ELECT CO INC,RES CTR,PRINCETON,NJ 08540

[2] ROYAL MELBOURNE INST TECHNOL,MELBOURNE 3000,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：965 / 967

页数：3

共 10 条

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[7] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

GOLOVCHENKO, JA ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :147-149

[8]

HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P178

[9] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (09) :572-573

[10] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS [J].

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