ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS

被引：14

作者：

SEALY, BJ

KULAR, SS

STEPHENS, KG

CROFT, R

PALMER, A

机构：

[1] CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND

[2] CITY UNIV LONDON,DEPT ELECT ENGN,LONDON EC1V 4PB,ENGLAND

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 22期

关键词：

D O I：

10.1049/el:19780484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：720 / 721

页数：2

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[1] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
CAMPISANO, SU
CATALANO, I
FOTI, G
RIMINI, E
EISEN, F
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 485 - 488
[2] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION
GOLOVCHENKO, JA
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 147 - 149
[3] PULSED LASER ANNEALING OF ZINC IMPLANTED GAAS
KULAR, SS
SEALY, BJ
STEPHENS, KG
CHICK, DR
DAVIS, QV
EDWARDS, J
[J]. ELECTRONICS LETTERS, 1978, 14 (04) : 85 - 87
[4] LASER-PULSE ENERGY-DEPENDENCE OF ANNEALING IN ION-IMPLANTED SI AND GAAS SEMICONDUCTORS
RIMINI, E
BAERI, P
FOTI, G
[J]. PHYSICS LETTERS A, 1978, 65 (02) : 153 - 155
[5] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K
SZE, SM
IRVIN, JC
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &