PREDICTION OF UNUSUAL ELECTRONIC-PROPERTIES OF SI QUANTUM FILMS

被引:37
作者
ZHANG, SB
ZUNGER, A
机构
[1] National Renewable Energy Laboratory, Golden
关键词
D O I
10.1063/1.109689
中图分类号
O59 [应用物理学];
学科分类号
摘要
Direct pseudopotential band structure calculations of thin Si(001) films reveal a number of features that are unexpected on the basis of conventional quantum confinement models: (i) The energies of some valence-band states exhibit oscillations when the number of monolayers in the film changes from even to odd, (ii) certain film wave functions have a cosine (rather than sine) envelope function, and (iii) the energy of the highest occupied film state remains pinned at a constant value for all even-layered film. We demonstrate a simple alternative to the effective-mass model which explains these results.
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页码:1399 / 1401
页数:3
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