SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON

被引:35
作者
BENDER, H
VERHAVERBEKE, S
CAYMAX, M
VATEL, O
HEYNS, MM
机构
[1] Interuniversity Micro-Electronics Center (IMEC), B-3001 Leuven
关键词
D O I
10.1063/1.356478
中图分类号
O59 [应用物理学];
学科分类号
摘要
The hydrogen termination and surface reconstruction of (100) silicon annealed at high temperature in a H-2 atmosphere at 1 bar is investigated with multiple internal reflection infrared spectroscopy and atomic force microscopy. The surface flattens and becomes 2 X 1 reconstructed and terminated by strained monohydrides. This surface is shown to be very stable against contamination and oxidation.
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收藏
页码:1207 / 1209
页数:3
相关论文
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