SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON

被引：35

作者：

BENDER, H

VERHAVERBEKE, S

CAYMAX, M

VATEL, O

HEYNS, MM

机构：

[1] Interuniversity Micro-Electronics Center (IMEC), B-3001 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.356478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen termination and surface reconstruction of (100) silicon annealed at high temperature in a H-2 atmosphere at 1 bar is investigated with multiple internal reflection infrared spectroscopy and atomic force microscopy. The surface flattens and becomes 2 X 1 reconstructed and terminated by strained monohydrides. This surface is shown to be very stable against contamination and oxidation.

引用

页码：1207 / 1209

页数：3

共 9 条

[1] BENDER H, 1993, 3RD P INT S CLEAN TE
[2] BORLAND J, 1988, SOLID STATE TECHNOL, V31, P111
[3] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
CHABAL, YJ
HIGASHI, GS
RAGHAVACHARI, K
BURROWS, VA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 2104 - 2109
[4] CHABAL YJ, 1992, MATER RES SOC SYMP P, V259, P349, DOI 10.1557/PROC-259-349
[5] NEW ORDERED STRUCTURE FOR THE H-SATURATED SI(100) SURFACE - THE (3X1) PHASE
CHABAL, YJ
RAGHAVACHARI, K
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (10) : 1055 - 1058
[6] SURFACE INFRARED STUDY OF SI(100)-(2X1)H
CHABAL, YJ
RAGHAVACHARI, K
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285
[7] RHEED OBSERVATIONS OF DISORDER ON SI(001)-(2X1) SURFACES
NORTON, NG
[J]. VACUUM, 1983, 33 (10-1) : 621 - 624
[8] INTERPLAY OF MONOHYDRIDE PHASE AND A NEWLY DISCOVERED DIHYDRIDE PHASE IN CHEMISORPTION OF H ON SI(100)2X1
SAKURAI, T
HAGSTRUM, HD
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1593 - 1596
[9] ATOMIC-FORCE MICROSCOPY AND INFRARED-SPECTROSCOPY STUDIES OF HYDROGEN BAKED SI SURFACES
VATEL, O
VERHAVERBEKE, S
BENDER, H
CAYMAX, M
CHOLLET, F
VERMEIRE, B
MERTENS, P
ANDRE, E
HEYNS, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10B): : L1489 - L1491

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