RHEED OBSERVATIONS OF DISORDER ON SI(001)-(2X1) SURFACES

被引：21

作者：

NORTON, NG

机构：

[1] Physics Department, Imperial College, London,SW7 2BZ, United Kingdom

来源：

VACUUM | 1983年 / 33卷 / 10-1期

关键词：

I would like to thank British Telecom for the silicon wafers; Drs P J Dobson and B A Joyce for many helpful discussions and the Science and Engineering Research Council for a Research Studentship;

D O I：

10.1016/0042-207X(83)90583-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：621 / 624

页数：4

共 17 条

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[6] INTERPRETATION OF SCANNING HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS WITH APPLICATION TO GAAS SURFACES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396
[8] COMPARATIVE LEED AND RHEED EXAMINATION OF STEPPED SURFACES - APPLICATION TO CU(111) AND GAAS(001) VICINAL SURFACES
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THEETEN, JB
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[J]. SURFACE SCIENCE, 1977, 65 (02) : 563 - 577
[9] DOUBLE DIFFRACTION SPOTS IN RHEED PATTERNS FROM CLEAN GE(111) AND SI(001) SURFACES
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INO, S
[J]. SURFACE SCIENCE, 1979, 85 (02) : 221 - 243
[10] SOME ASPECTS OF SURFACE BEHAVIOR OF SILICON
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[J]. SURFACE SCIENCE, 1973, 35 (01) : 1 - 7

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