The quasicrystalline transformation in the AlCr system

被引：24

作者：

Lilienfeld, D. A. ^{[1
]}

Nastasi, M. ^{[1
]}

Johnson, H. H. ^{[1
]}

Ast, D. G. ^{[1
]}

Mayer, J. W. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci, Ithaca, NY 14853 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1986年 / 1卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1986.0237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Al80Cr20 films were made by coevaporation and by room temperature ion irradiation of the coevaporated films. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion beam assisted anneal. The intensity of the quasicrystalline electron diffraction pattern increases continuously within the annealing temperature range from 547 degrees to 607 degrees C. The starting state of the films (as-deposited or ion-irradiated codeposited) had no effect on the thermal transformation to the quasicrystalline state. Ion irradiation of the amorphous phase at 200 degrees C produces a more complete set of icosahedral diffraction lines. Icosahedral AlCr has the same reciprocal lattice spacings as icosahedral AlMn.

引用

页码：237 / 242

页数：6

共 25 条

[1] PHENOMENOLOGICAL THEORY OF ICOSAHEDRAL INCOMMENSURATE (QUASIPERIODIC) ORDER IN MN-AL ALLOYS [J].