MEASUREMENT OF ELECTROPHYSICAL PROPERTIES OF SILICON-CARBIDE EPITAXIAL-FILMS

被引：22

作者：

LEBEDEV, AA

CHELNOKOV, VE

机构：

[1] A. F. Ioffe Physical-Technical Institute, St. Petersburg, 194021

来源：

关键词：

D O I：

10.1016/0925-9635(94)90157-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work parameters and distribution of deep and shallow centers in 6H and 4H SiC epitaxial layers made by sublimation in an open system were investigated. In 6H SiC five deep centers were identified, and in 4H SiC two deep centers. The temperature dependence of the diffusion potential of p-n structures made from the epi-layers and their degree of compensation was investigated. The role in the processes of radiative recombination of the deep centers identified in the study is considered.

引用

页码：1393 / 1397

页数：5

共 11 条

[1]

ALEKSEENKO MV, 1987, SOV PHYS SEMICOND+, V21, P494

[2]

ANDREEV AN, 1993, OCT P INT C SIL CARB

[3]

Anikin M. M., 1989, Soviet Technical Physics Letters, V15, P636

[4]

ANIKIN MM, 1990, SOV PHYS SEMICOND+, V24, P869

[5]

ANIKIN MM, 1985, SOV PHYS SEMICOND+, V19, P69

[6]

ANIKIN MM, 1986, SOV PHYS SEMICOND+, V20, P1357

[7]

ANIKIN MM, 1992, SPRINGER P PHYSICS, V56, P269

[8]

ANIKIN MM, 1992, SEMICONDUCTOR INTERF, P280

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] BORON-RELATED DEEP CENTERS IN 6H-SIC [J].

SUTTROP, W ;

PENSL, G ;

LANIG, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (03) :231-237

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