BORON-RELATED DEEP CENTERS IN 6H-SIC

被引：142

作者：

SUTTROP, W ^{[1
]}

PENSL, G ^{[1
]}

LANIG, P ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8520 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 03期

关键词：

71.55.Ht;

D O I：

10.1007/BF00324007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-silicon carbide layers are grown by a liquid phase epitaxy (LPE) process. The layers are doped with boron either by ion implantation or during the LPE process from a B-doped silicon melt. Deep-level transient spectroscopy (DLTS), admittance spectroscopy and photoluminescence (PL) are used to investigate deep impurity centers. Two electrically active defect centers are detected: the isolated boron acceptor at EB=Ev+0.3eV and the boron-related D-center at ED=Ev+0.58eV. The yellow luminescence observed in these layers is proposed to be due to pair recombination via D-center and nitrogen donor. Formation and origin of the D-center are discussed. © 1990 Springer-Verlag.

引用

页码：231 / 237

页数：7

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