EXPERIMENTAL-STUDY OF THE POOLE-FRENKEL EFFECT ON THE SI-TL ACCEPTOR

被引：19

作者：

KELLER, W ^{[1
]}

PENSL, G ^{[1
]}

SCHULZ, M ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST APPL PHYS,D-8520 ERLANGEN,FED REP GER

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90254-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：244 / 251

页数：8

共 12 条

[1] ENERGY-LEVEL OF THALLIUM IN SILICON [J].

BROTHERTON, SD ;

GILL, A .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :953-955

[2]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[3] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

[4]

KELLER W, UNPUB

[5] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214

[6] ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS [J].

MARTIN, PA ;

STREETMAN, BG ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7409-7415

[7] THALLIUM-DOPED SILICON IONIZATION AND EXCITATION-LEVELS BY INFRARED-ABSORPTION [J].

NEVIN, JH ;

HENDERSON, HT .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2130-2133

[8] ADMITTANCE OF P-N-JUNCTIONS CONTAINING TRAPS [J].

OLDHAM, WG ;

NAIK, SS .

SOLID-STATE ELECTRONICS, 1972, 15 (10) :1085-+

[9] ADMITTANCE SPECTROSCOPY - A POWERFUL CHARACTERIZATION TECHNIQUE FOR SEMICONDUCTOR CRYSTALS - APPLICATION TO ZNTE [J].

PAUTRAT, JL ;

KATIRCIOGLU, B ;

MAGNEA, N ;

BENSAHEL, D ;

PFISTER, JC ;

REVOIL, L .

SOLID-STATE ELECTRONICS, 1980, 23 (11) :1159-1169

[10] ELECTRIC-FIELD AND IMPURITY CONCENTRATION EFFECTS ON THE IONIZATION-ENERGY OF IMPURITIES - APPLICATION TO ACCEPTORS IN ZNTE [J].

PAUTRAT, JL .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :661-670

← 1 2 →