THALLIUM-DOPED SILICON IONIZATION AND EXCITATION-LEVELS BY INFRARED-ABSORPTION

被引：8

作者：

NEVIN, JH ^{[1
]}

HENDERSON, HT ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT ENGN,SOLID STATE ELECTR LAB,CINCINNATI,OH 45221

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2130 / 2133

页数：4

共 13 条

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[2]

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[5] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

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KAISER, RH .

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[6] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J].

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KAISER, RH .

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[7] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J].

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KAISER, RH .

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[8] THEORY OF DONOR STATES IN SILICON [J].

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[9]

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[10] CONCENTRATION EFFECTS ON THE LINE SPECTRA OF BOUND HOLES IN SILICON [J].

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