METAL-INSULATOR-TRANSITION IN A DOUBLE-DONOR SYSTEM, SI-P,AS

[1] BERGGREN KF, 1983, PHILOS MAG, V27, P1027

[2] STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 1082 - 1085

[3] DASILVA AF, IN PRESS PHYS SCR

[4] CLUSTERING MODEL IN N-DOPED MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5764 - 5773

[5] METAL-INSULATOR-TRANSITION IN A DOUBLE-DONOR SYSTEM, SI-P,AS [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (23) : 2144 - 2147

[6] METAL-INSULATOR-TRANSITION IN SI-AS [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 638 - 640

[1] BERGGREN KF, 1983, PHILOS MAG, V27, P1027

[2] STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 1082 - 1085

[3] DASILVA AF, IN PRESS PHYS SCR

[4] CLUSTERING MODEL IN N-DOPED MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5764 - 5773

[5] METAL-INSULATOR-TRANSITION IN A DOUBLE-DONOR SYSTEM, SI-P,AS [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (23) : 2144 - 2147

[6] METAL-INSULATOR-TRANSITION IN SI-AS [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 638 - 640