STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

被引：47

作者：

BHATT, RN

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.1082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1082 / 1085

页数：4

共 25 条

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