DONOR-POLARIZABILITY ENHANCEMENT AS THE INSULATOR-METAL TRANSITION IS APPROACHED FROM THE INSULATING SIDE

被引：34

作者：

CASTNER, TG

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.21.3523

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3523 / 3538

页数：16

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[10] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON
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