DIELECTRIC-CONSTANT ENHANCEMENT AS THE INSULATOR-METAL TRANSITION IS APPROACHED FROM THE INSULATING SIDE

被引：4

作者：

CASTNER, TG

机构：

[1] University of Rochester, Rochester

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.20.3505

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comparison of the dielectric-constant-enhancement theory of Leroux Hugon and Ghazali with previous experimental data shows their calculated Nc nearly a factor of 3 too small, thus giving less than satisfactory agreement with experiment. Questions about the adequacy of their theoretical approach are also discussed. © 1979 The American Physical Society.

引用

页码：3505 / 3507

页数：3

共 12 条

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[3] CASTNER TG, UNPUBLISHED
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[8] INSULATING SIDE OF METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS AND DIELECTRIC-CONSTANT ENHANCEMENT
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