INSULATING SIDE OF METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS AND DIELECTRIC-CONSTANT ENHANCEMENT

被引：33

作者：

HUGON, PL ^{[1
]}

GHAZALI, A ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92190 BELLEVUE,FRANCE

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.14.602

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：602 / 605

页数：4

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