VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY

被引：103

作者：

LEE, TF ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

关键词：

D O I：

10.1063/1.321346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：373 / 380

页数：8

共 17 条

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[6] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
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[7] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
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[8] KUDINOV EK, 1962, SOV PHYS JETP-USSR, V15, P585
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[J]. PHYSICAL REVIEW, 1965, 139 (1A): : A343 - &