INTERACTION OF IMPURITIES AND MOBILE CARRIERS IN SEMICONDUCTORS

被引：30

作者：

LEHMAN, GW

JAMES, HM

机构：

来源：

PHYSICAL REVIEW | 1955年 / 100卷 / 06期

关键词：

D O I：

10.1103/PhysRev.100.1698

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1698 / 1712

页数：15

共 15 条

[1]

BETHE HA, 1933, HDB PHYSIK 2, V24, P34

[2]

BOHM D, 1951, QUANTUM THEORY, P221

[3]

CASTELLAN GW, 1950, SEMICONDUCTING MATER, P8

[4] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[5]

FRIEDEL J, 1952, PHILOS MAG, V43, P153

[6]

Husimi K., 1940, PROC PHYS MATH SOC J, V3, P264, DOI [DOI 10.11429/PPMSJ1919.22.4_264, 10.11429/ppmsj1919.22.4_264]

[7]

LEHMAN GW, 1950, THESIS PURDUE U

[8] APPROXIMATE VARIATIONAL PRINCIPLE IN QUANTUM STATISTICS [J].

MACDONALD, WM ;

RICHARDSON, JM .

PHYSICAL REVIEW, 1954, 96 (01) :18-21

[9] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883