CHEMICAL-SHIFT PARAMETERS FOR SHALLOW DONORS IN SEMICONDUCTORS

被引：11

作者：

HALE, EB

机构：

[1] UNIV MISSOURI,MAT RES CTR,ROLLA,MO 65401

[2] UNIV MISSOURI,DEPT PHYS,ROLLA,MO 65401

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 04期

关键词：

D O I：

10.1016/S0022-3697(73)80167-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：621 / 629

页数：9

共 34 条

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[4]

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[8] EFFECT OF STRESS ON DONOR WAVE FUNCTIONS IN GERMANIUM [J].

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[9] SHALLOW DONOR ELECTRONS IN SILICON .2. CONSIDERATIONS REGARDING FERMI CONTACT INTERACTIONS [J].

HALE, EB ;

MIEHER, RL .

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[10] SHALLOW STATES IN SEMICONDUCTORS BY IMPURITY MODEL POTENTIAL METHOD [J].

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