SHALLOW STATES IN SEMICONDUCTORS BY IMPURITY MODEL POTENTIAL METHOD

被引：10

作者：

JAROS, M

机构：

[1] Department of Theoretical Physics, University of Newcastle upon Tyne

来源：

PHYSICA STATUS SOLIDI | 1969年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssb.19690360119

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A impurity model potential is constructed using the method of Heine et al. The treatment of the short‐range forces in this method is refined making the theory applicable to the impurity problem. It is shown how a simple spherical screened model potential can be used for the ground state calculation of shallow donors in semiconductors; the ionization energies of P, As, and Sb in silicon are given. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：181 / &

共 13 条

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[10] MORITA A, 1966, J PHYS SOC JAPAN S, V21, P238

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