CORRECTIONS TO GROUND STATE ENERGIES OF SHALLOW DONORS IN SILICON AND GERMANIUM

被引：29

作者：

CSAVINSZKY, P

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(63)90004-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1003 / &

共 16 条

[1] BLATT FJ, 1957, SOLID STATE PHYSICS, V4, P354
[2] BLATT FJ, 1957, SOLID STATE PHYS, V4, P343
[3] GOMBAS P, 1956, ENCYCL PHYS, V36, P132
[4] GOMBAS P, 1956, ENCYCL PHYS, V36, P125
[5] GOMBAS P, 1956, ENCYCL PHYS, V36, P109
[6] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
KOHN, W
[J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320
[7] EFFECTIVE MASS THEORY IN SOLIDS FROM A MANY-PARTICLE STANDPOINT
KOHN, W
[J]. PHYSICAL REVIEW, 1957, 105 (02): : 509 - 516
[8] HYPERFINE SPLITTING OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 97 (04): : 883 - 888
[9] KOHN W, 1957, SOLID STATE PHYSICS, V5, P288
[10] KOHN W, 1957, SOLID STATE PHYSICS, V5, P291