DENSITY-FUNCTIONAL APPROACH TO METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

被引：44

作者：

GHAZALI, A

LEROUXHUGON, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.41.1569

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1569 / 1572

页数：4

相关论文

共 15 条

[1] ABSENCE OF ANDERSONS TRANSITION IN RANDOM LATTICES WITH OFF-DIAGONAL DISORDER
ANTONIOU, PD
ECONOMOU, EN
[J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3768 - 3781
[2] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON
CASTNER, TG
LEE, NK
CIELOSZYK, GS
SALINGER, GL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630
[3] GESCHWIND S, 1976, J PHYS PARIS C, V37, pC4
[4] EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM
GUNNARSSON, O
LUNDQVIST, BI
[J]. PHYSICAL REVIEW B, 1976, 13 (10) : 4274 - 4298
[5] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
KOHN, W
SHAM, LJ
[J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
[6] INSULATING SIDE OF METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS AND DIELECTRIC-CONSTANT ENHANCEMENT
HUGON, PL
GHAZALI, A
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 602 - 605
[7] SPECIFIC-HEAT STUDIES OF HEAVILY DOPED SI DOUBLE-BOND P
MARKO, JR
HARRISON, JP
QUIRT, JD
[J]. PHYSICAL REVIEW B, 1974, 10 (06): : 2448 - 2456
[8] THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM
MATSUBARA, T
TOYOZAWA, Y
[J]. PROGRESS OF THEORETICAL PHYSICS, 1961, 26 (05): : 739 - 756
[9] Mott N., 1976, J PHYS COLLOQUES, V37, pC4
[10] THE TRANSITION TO THE METALLIC STATE
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (62) : 287 - 309