HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM

被引：42

作者：

CUEVAS, M

FRITZSCH.H

机构：

来源：

PHYSICAL REVIEW | 1965年 / 139卷 / 5A期

关键词：

D O I：

10.1103/PhysRev.139.A1628

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1628 / &

共 32 条

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[3] TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - COMBINATION OF VARIATIONAL AND PERTURBATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD
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[4] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM
CUEVAS, M
FRITZSCH.H
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[5] FISTUL VI, 1964, P INTERNATIONAL C SE, P371
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[9] FRITZSCHE H, TO BE PUBLISHED
[10] FRITZSCHE H, 1962, P INTERNATIONAL C PH, P29