SURFACE MORPHOLOGIES AND ELECTRICAL-PROPERTIES OF (BA,SR)TIO3 FILMS PREPARED BY 2-STEP DEPOSITION OF LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION

被引：77

作者：

KAWAHARA, T

YAMAMUKA, M

YUUKI, A

ONO, K

机构：

[1] Semiconductor Research Laboratory, Mitsubishi Electric Corporation, Hyogo, 661

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

DRAM; CAPACITOR; BST; LIQUID SOURCE CVD; STEP COVERAGE; 2-STEP DEPOSITION; LEAKAGE CURRENT; ABSORPTION CURRENT;

D O I：

10.1143/JJAP.34.5077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Protrusions of (Ba, Sr)TiO3 (BST) crystallites were found to appear on BST film surfaces prepared by liquid source chemical vapor deposition (CVD) at a substrate temperature T-s=420 degrees C and a reactor pressure P=1.5 Torr. Such protrusions were successfully suppressed by two-step deposition, where BST films consisted of a buffer layer and a main layer; the buffer layer was a CVD-BST film about 60 Angstrom thick annealed in N-2 ambient. By this two-step deposition on Pt electrodes, the BST film properties of equivalent SiO2 thickness t(eq)=0.56 nm, leakage current J(L)=1.2X10(-8) Angstrom/cm(2) at +1.1 V and dielectric loss tan delta=0.011 were achieved at a total film thickness of 230 Angstrom, along with a coverage of 80% at a trench of aspect ratio 0.65 and sufficiently low absorption current.

引用

页码：5077 / 5082

页数：6

共 14 条

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