MAGNETIC-FIELD-DEPENDENT RAMAN-SCATTERING IN EUSE

被引：27

作者：

TSANG, JC

DRESSELH.MS

AGGARWAL, RL

REED, TB

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

[3] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[4] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.9.997

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：997 / 1007

页数：11

共 22 条

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[12]

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[13]

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DRESSELH.MS ;

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REED, TB .

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[15]

REED TB, 1974, PHYS REV B, V9, P984

[16] MAGNETO-QUANTUM-ELECTRIC EFFECT [J].

SALANECK, W ;

SAWADA, Y ;

BURSTEIN, E .

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[17]

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[18] PHONONS AND MAGNETIC ORDER IN FERROMAGNETIC CDCR2SE4 AND CDCR2S4 [J].

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HARBEKE, G .

PHYSIK DER KONDENSITERTEN MATERIE, 1970, 12 (01) :1-+

[19] THEORY OF PHONON RAMAN-SCATTERING IN TRANSITION-METAL COMPOUNDS [J].

SUZUKI, N ;

KAMIMURA, H .

SOLID STATE COMMUNICATIONS, 1972, 11 (12) :1603-1606

[20]

THOMAS DG, 1961, PHYS REV, V122, P946

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